• Composed of N and P-type Semiconductors
• N-type Semiconductor has an excess of
electrons
– Doped with impurity with more valence electrons
than silicon
• P-type Semiconductor has a deficit of
electrons (Holes)
– Doped with impurity with less valence electrons
than silicon
P-N Junction (Basic diode):
- Bringing P and N Semiconductors in contact
- Creation of a Depletion Zone
P-Type N-Type
• P-N Junction
• Reverse Biased => No Current
• Applying –ve Voltage to Anode increases
Barrier Voltage & Inhibits Current Flow
- Creation of a Depletion Zone
P-Type N-Type
• P-N Junction
• Reverse Biased => No Current
• Applying –ve Voltage to Anode increases
Barrier Voltage & Inhibits Current Flow
• P-N Junction
• Forward Biased => Current Flows
• Applying +ve Voltage > Barrier Voltage to
Anode allows current flow
• Basic Transistor
Water pipe analogy
Properties of the BJT
Common emitter configuration
• Amplifier mode
• Switching mode
• Switching mode
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